摘要翻译：
本文研究了一种用于SiC功率MOSFET高频硬开关的GaN HEMT推挽结构栅驱动器。GaN HEMTs的低导通电阻和低输入电容从逻辑层面上适用于高频栅极驱动器，而SiC MOSFET的高雪崩能力的鲁棒性适用于功率变换器中的阀晶体管。我们提出的栅极驱动器由数字隔离器、互补Si MOSFET和GaN HEMTs组成。GaN HEMT推挽级由于其优越的开关特性而具有很高的驱动能力，互补Si MOSFET可以增强来自数字隔离器的控制信号。通过对每个电路元件的分析，研究了栅极驱动器开关频率的限制因素，并提出了一种改进的栅极驱动器驱动结构。采用改进的GaN HEMTs栅极驱动器实现了SiC MOSFET的20MHz硬开关。
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英文标题：
《High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC
  MOSFETs》
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作者：
Takafumi Okuda and Takashi Hikihara
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最新提交年份：
2017
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分类信息：

一级分类：Electrical Engineering and Systems Science        电气工程与系统科学
二级分类：Signal Processing        信号处理
分类描述：Theory, algorithms, performance analysis and applications of signal and data analysis, including physical modeling, processing, detection and parameter estimation, learning, mining, retrieval, and information extraction. The term "signal" includes speech, audio, sonar, radar, geophysical, physiological, (bio-) medical, image, video, and multimodal natural and man-made signals, including communication signals and data. Topics of interest include: statistical signal processing, spectral estimation and system identification; filter design, adaptive filtering / stochastic learning; (compressive) sampling, sensing, and transform-domain methods including fast algorithms; signal processing for machine learning and machine learning for signal processing applications; in-network and graph signal processing; convex and nonconvex optimization methods for signal processing applications; radar, sonar, and sensor array beamforming and direction finding; communications signal processing; low power, multi-core and system-on-chip signal processing; sensing, communication, analysis and optimization for cyber-physical systems such as power grids and the Internet of Things.
信号和数据分析的理论、算法、性能分析和应用，包括物理建模、处理、检测和参数估计、学习、挖掘、检索和信息提取。“信号”一词包括语音、音频、声纳、雷达、地球物理、生理、（生物）医学、图像、视频和多模态自然和人为信号，包括通信信号和数据。感兴趣的主题包括：统计信号处理、谱估计和系统辨识；滤波器设计；自适应滤波/随机学习；（压缩）采样、传感和变换域方法，包括快速算法；用于机器学习的信号处理和用于信号处理应用的机器学习；网络与图形信号处理；信号处理中的凸和非凸优化方法；雷达、声纳和传感器阵列波束形成和测向；通信信号处理；低功耗、多核、片上系统信号处理；信息物理系统的传感、通信、分析和优化，如电网和物联网。
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英文摘要：
  In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency gate driver from the logic level, and robustness of SiC MOSFET with high avalanche capability is suitable for a valve transistor in power converters. Our proposed gate driver consists of digital isolators, complementary Si MOSFETs, and GaN HEMTs. The GaN HEMT push-pull stage has a high driving capability owing to its superior switching characteristics, and complementary Si MOSFETs can enhance the control signal from the digital isolator. We investigated limiting factors of the switching frequency of the proposed gate driver by focusing on each circuit component and proposed an improved driving configuration for the gate driver. As a result, 20-MHz hard switching of a SiC MOSFET was achieved using the improved gate driver with GaN HEMTs.
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PDF链接：
https://arxiv.org/pdf/1711.02832