摘要翻译：
本文报道了两种N掺杂GaN/AlN双势垒共振隧穿二极管(RTDs)的首次射频噪声测量，每种器件都具有室温负差分电阻(NDR)和强近紫外光发射。测量是用标准的、非隔离的RF接收机进行的，校准是使用替代电阻/冷热辐射测量技术进行的，该技术工作在正差分电阻(PDR)区，而不是NDR区。一个高质量的InGaAs/AlAs双势垒RTD被用作对照样品，在PDR区域显示散粒噪声抑制降低到$\γ\\0.5左右，与预期的一样。GaN/AlN RTDs在PDR区既有散粒噪声的增强，又有散粒噪声的抑制，但在发光阈值偏置区没有明显的突增现象。这支持了这样一个假设，即发光所需的空穴是由电子（齐纳）带间隧穿产生的，而不是撞击电离。此外，最小散粒噪声因子为0.34，表明GaN/AlN RTDs具有三势垒器件的特性。
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英文标题：
《Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling
  Diodes》
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作者：
E. R. Brown, W-D. Zhang, T. A. Growden, P. R. Berger, R. Droopad, D.
  F. Storm and D. J. Meyer
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最新提交年份：
2018
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分类信息：

一级分类：Physics        物理学
二级分类：Mesoscale and Nanoscale Physics        介观和纳米物理
分类描述：Semiconducting nanostructures: quantum dots, wires, and wells. Single electronics, spintronics, 2d electron gases, quantum Hall effect, nanotubes, graphene, plasmonic nanostructures
半导体纳米结构：量子点、线和阱。单电子学，自旋电子学，二维电子气，量子霍尔效应，纳米管，石墨烯，等离子纳米结构
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一级分类：Electrical Engineering and Systems Science        电气工程与系统科学
二级分类：Signal Processing        信号处理
分类描述：Theory, algorithms, performance analysis and applications of signal and data analysis, including physical modeling, processing, detection and parameter estimation, learning, mining, retrieval, and information extraction. The term "signal" includes speech, audio, sonar, radar, geophysical, physiological, (bio-) medical, image, video, and multimodal natural and man-made signals, including communication signals and data. Topics of interest include: statistical signal processing, spectral estimation and system identification; filter design, adaptive filtering / stochastic learning; (compressive) sampling, sensing, and transform-domain methods including fast algorithms; signal processing for machine learning and machine learning for signal processing applications; in-network and graph signal processing; convex and nonconvex optimization methods for signal processing applications; radar, sonar, and sensor array beamforming and direction finding; communications signal processing; low power, multi-core and system-on-chip signal processing; sensing, communication, analysis and optimization for cyber-physical systems such as power grids and the Internet of Things.
信号和数据分析的理论、算法、性能分析和应用，包括物理建模、处理、检测和参数估计、学习、挖掘、检索和信息提取。“信号”一词包括语音、音频、声纳、雷达、地球物理、生理、（生物）医学、图像、视频和多模态自然和人为信号，包括通信信号和数据。感兴趣的主题包括：统计信号处理、谱估计和系统辨识；滤波器设计；自适应滤波/随机学习；（压缩）采样、传感和变换域方法，包括快速算法；用于机器学习的信号处理和用于信号处理应用的机器学习；网络与图形信号处理；信号处理中的凸和非凸优化方法；雷达、声纳和传感器阵列波束形成和测向；通信信号处理；低功耗、多核、片上系统信号处理；信息物理系统的传感、通信、分析和优化，如电网和物联网。
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英文摘要：
  We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission. The measurements are made with a standard, un-isolated RF receiver and calibration is made using a substitution-resistor/hot-cold radiometric technique which works in the positive differential resistance (PDR) region but not the NDR region. A high-quality InGaAs/AlAs double-barrier RTD is used as a control sample and displays shot noise suppression down to $\Gamma\approx$0.5 in the PDR region, as expected. The GaN/AlN RTDs display both shot-noise enhancement and suppression in the PDR regions, but no obvious sign of sudden shot-noise enhancement in the threshold bias region of light emission. This supports the hypothesis that the holes required for light emission are created by electronic (Zener) interband tunneling, not impact ionization. Further the minimum shot-noise factor of $\Gamma\sim$ 0.34 suggests that the GaN/AlN RTDs are acting like triple-barrier devices.
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PDF链接：
https://arxiv.org/pdf/1806.0927