朋友圈 硬核知识点分享
1.大家一致很关心的copper CMP(很多出问题)，针对CU的slurry的dilution并不会太影响removal rate，反而slurry abrasive particles size is crucial element,besides additives of presence of a flocculent(添加剂的凝聚物会降低表面摩擦力) and the ionic strength of slurry(研磨剂中的添加的离子强度)，这些才是影响RR的关键因素。
2.很多人问的WIW(with-in wafer) and WTW(wafer to wafer)的uniformity怎么学习并管理，首先WIW不稳定的通常变化是因为pad conditioner中的in-situ(保证slurry能够transport to wafer-pad surface,keep pad roughness,overcondition will reduce PLT)或者ex-situ(during CMP these time periods,pad surface gets cloggrd with particle and quality not good ,ex-situ can open it)不够造成的，调整你的 pad-conditioning,问题应该可以解决。