悬赏 30 个论坛币 已解决
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2.Liu Daoguang ,Hao yue, Xu Shiliu, et al. Self-Aligned SiGe HBT Based Dry-Wet Etching. Chinese Journal of Semiconductors,2005,26(1):102-105
3.Liu Daoguang ,Hao yue, Xu Shiliu, et al.
SiGe HBT With fmax of 157GHz Based MBE. Chinese Journal of Semiconductors,2005,26(3):528-531
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Ⅰ:Theory.IEEETrans Electro Devices, 2002,49(7):1250-1257
5.Jungemann C,Neinhus B,Meinerzhagen B.Hierarchical 2-d DD and HD noise simulations of Si and SiGe devices—part
Ⅱ:Results.IEEETrans Electro Devices, 2002,49(7):1258-1264
6.Greenberg D, et al. Noise performance scaling in high-speed silicon RF technologies. In Thec.Dig.IEEE.MTT-S,2003:113-116
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9.Freeman G ,et al. low phase noise SiGe voltage-controlled oscillators for wireless application. Microw.J.,2002(45):84-99
10.Harame D L, et al. Current status and future trends of SiGe BiCMOS technology. IEEE Trans. Electron Devices,2000,49(5):863-870
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12.张伟，王玉东，熊小义，等。TiSi2 在微波低噪声SiGe HBT中的应用。半导体技术，2006,31（1）：40-43
13.刘道广。SiGe异质结晶体管及其集成技术的研究。博士论文。西安：西安电子科技大学，2004
14.Martinet B, Baudry H,Kermarrec O, et al. 100GHz SiGe : C HBTs using non selective base epitaxy. Proc. ESSDERC, 2001:97
15.Washio K, Shimamoto H, Oda K, et al .A 0.2μm 180GHz fmax 6.7ps ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital application. IEEE Trans. Electron. Devices, 2002,49:271
16.Rieh JS,etal. SiGe HBTs with cut-off frequency of 350GHz.IEDM Technical Digest,2002：771
17.Amour A St, Sturm JC, Lacroix Y, et al. Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic SiGe alloy layers on Si(001).Appl. phys.Lett.,1995(67):3915
18.Rucher H,Heinemann B,Bolze D, et al. Dopant diffusion in C-doped Si and SiGe:physical model and experimental verification
19.Gruhel A, et al. The reduction of base dopant out-diffusion in SiGe heterojunction bipolar transistors by carbon doping. Appl. Phys.lett.1999(75)1311
20.Hashim Md R, Lever R F,Ashburn P.2D simulation of the effects of transient enhanced boron out-diffision from base of SiGe HBT due to an extrinsic base implant. Solid State Electronics, 1999(43):131
21.Schuppen A.SiGe HBTs for mobile communication.Solid State Electronics,1999(43):1373.
22.Rosenfeld D,et al.The effect of strain on the base resistance and transit time of ungraded and composiyional-graded SiGe HBTs. Solid-state electronics,1994,37(1):119-126
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22.Rosenfeld D,et al.The effect of strain on the base resistance and transit time of ungraded and
21.Schuppen A.SiGe HBTs for mobile communication.Solid State Electronics,1999(43):1373
20.Hashim Md R, Lever R F,Ashburn P.2D simulation of the effects of transient enhanced boron out-diffision
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